Method and apparatus for evaluating surface roughness of an epitaxial growth layer, method and apparatus for measuring reflectance of an epitaxial growth layer, and manufacturing method of semiconductor device

摘要

Correlation formulae having predetermined forms (i.e., straight lines representing relationships between the surface roughness of the reflectance) are determined in advance between measurement values of the ultraviolet reflectance of the surfaces of respective sample epitaxial growth layers obtained by using an ultraviolet spectrophotometer at a wavelength of 200 nm and measured values of the surface roughness of the same samples by using an atomic force microscope. The surface roughness of an ensuing measurement object is determined by measuring only its ultraviolet reflectance and substituting a resulting measurement value into the correlation formulae.