POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY

摘要

PROBLEM TO BE SOLVED: To provide a positive photoresist composition having an improving effect on a margin for exposure (particularly through isolated lines) in the production of a semiconductor device, that is, less liable to a change of the line width of isolated lines when light exposure is varied. SOLUTION: The positive photoresist composition contains (A) at least one specified compound which generates sulfonic acid when irradiated with active light or radiation and (B) a resin which contains at least one selected from repeating units each having a specified alicyclic structure in the principal chain and is decomposed by the action of the acid to increase its solubility to an aqueous alkali solution.