| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device where no parasitic device is generated. SOLUTION: The manufacturing method of semiconductor devices has element isolation and impurity injection processes. In the element isolation process, a single crystal silicon layer that is provided on a semiconductor substrate 11 via an insulation layer is partially oxidized, and a plurality of island-shaped single crystal silicon layers 13a that are divided by an insulation layer 16 are formed. In the injection process, an impurity ion 18 is injected to the single crystal silicon layer 13a for activating the silicon layer 13a. In this case, impurities are injected to the silicon layer 13a by injection energy where the concentration of the impurities is maximized at the position of ends Ea and Eb of the silicon layer 13a.
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