METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve reliability and productivity of the semiconductor device by increasing a surface area of a storage electrode. CONSTITUTION: A lower insulating layer including an isolation layer, a gate electrode, and a bit line is formed on a semiconductor substrate. The first contact hole is formed on the substrate. The first polysilicon layer is formed on a whole surface of the above structure. A sacrificial layer is formed on the whole surface of the above structure. A photo-resist pattern is formed on the sacrificial layer. The second contact hole(23) is formed by etching the sacrificial layer. The second polysilicon layer(25) is formed on the whole surface of the above structure. A storage electrode mask(27) is formed on the second polysilicon layer(25). An etch process is performed and the storage electrode mask(27) is removed therefrom. The sacrificial layer pattern is removed by using an etch selection ratio.