Methods of forming SOI insulator layers, methods of forming transistor devices, and semiconductor devices and assemblies,申请号US09/735440-传众专利搜索

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发明名称	Methods of forming SOI insulator layers, methods of forming transistor devices, and semiconductor devices and assemblies
摘要
申请公布号	US6281056(B1)	申请公布日期	2001.08.28
申请号	US09/735440	申请日期	2000.12.12
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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