发明名称 |
Method for making an integrated circuit including deutrium annealing of metal interconnect layers |
摘要 |
A method of making an integrated circuit includes forming a plurality of copper interconnect layers adjacent a semiconductor substrate. The plurality of copper interconnect layers are then annealed, in a deuterium ambient, prior to chemical mechanical polishing of such layers. The microstructure of each of the copper interconnect layers is thereby stabilized.
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申请公布号 |
US6281110(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19990361733 |
申请日期 |
1999.07.27 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
KIZILYALLI ISIK C.;MERCHANT SAILESH MANSINH;ROY PRADIP KUMAR |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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