SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a new semiconductor device. SOLUTION: This method is characterized by that an amorphous semiconductor film is formed on an insulating body; nickel is added to the amorphous semiconductor film; a heat treatment is performed to the amorphous semiconductor film to crystallize the amorphous semiconductor film; the crystallized semiconductor film is subjected to a heat treatment in an oxidizing atmosphere to oxidize part of the crystallized semiconductor film; and a plurality of semiconductor films isolated form each other by the oxidation are used for a channel forming region to form a plurality of thin film transistors.