| 摘要 |
PURPOSE:To reduce floating capacitance between a pair of opposed tabs by protruding the noses of the tabs so that angles formed by the two sides of the noses are shaped at approximately 90 deg. while orienting the adjacent two sides of a semiconductor pellet so as to approximately run parallel with the two sides of the noses of the tabs. CONSTITUTION:The shapes of tabs 3a, 3b take approximately a pentagon, the noses of these tabs are protruded so that angles formed by two sides are shaped at 90 deg., and a pellet 4, to which a P-N junction layer is formed and which consists of silicon, etc., is joined with one tab 3a through paste composed of a gold/silicon eutectic, etc. The shape of the pellet 4 takes approximately a quadrangle, adjacent two sides on the nose side of the tab 3a are oriented so as to approximately run parallel with the two sides of the nose of the tab 3a, a wire 5 made up of gold, etc., is bonded between the pellet 4 and the other tab 3b, and the tab 3a and the tab 3b are connected electrically. Accordingly, a distance between the tabs is not shortened as a whole, thus reducing floating capacitance between the tabs. |
