| 摘要 |
<p>PROBLEM TO BE SOLVED: To previously form a ball cell substrate, to remove the diffusion layer of second conductivity tape silicon along a spherical outline without local heating, to expose first conductivity type silicon and to form a ball diode substrate. SOLUTION: A first process for preparing a ball cell having a spherical substrate constituting first conductivity type silicon and second conductivity type silicon made to form p-n junction on the surface, a second process for arraying plural ball cells in a matrix shape, exposing a part of or whole hemispheres of second conductivity type silicon in the ball cells by sealing resin, and forming a ball cell substrate where the ball cells are mutually connected; and a third process for spraying abrasive grains to the exposed second conductive silicon of the ball cell substrate with prescribed jet pressure by a sand blasting method, removing the exposed part of second conductivity type silicon and exposing first conductivity type silicon; are given.</p> |
