发明名称 |
Unique via patterning scheme which utilizes hard mask cap for low dielectric constant materials |
摘要 |
A method for fabricating an interconnect system is provided. A low dielectric constant layer (LDCL) is formed onto a substrate. A hard mask is formed onto the LDCL. A patterning material is formed onto the hard mask. The patterning material is via patterned. A via pattern of the patterning material is transferred to the hard mask. The patterning material is stripped at a substantially low temperature. Vias are formed through the LDC using a via pattern formed in the hard mask.
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申请公布号 |
US2001016405(A1) |
申请公布日期 |
2001.08.23 |
申请号 |
US20010808758 |
申请日期 |
2001.03.14 |
申请人 |
NGUYEN PHI L.;WONG LAWRENCE D. |
发明人 |
NGUYEN PHI L.;WONG LAWRENCE D. |
分类号 |
H01L21/768;(IPC1-7):H01L21/20;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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