ABRASIVE GRAIN AND POLISHING LIQUID, METHOD OF POLISHING THEREOF, AND METHOD OF PRODUCING SEMICONDUCTOR APPARATUS

摘要

PROBLEM TO BE SOLVED: To reduce scratches occurring in polishing of a thin film since flattening of the thin film formed on a wafer is indispensable so as to attain a high integration of semiconductor element. SOLUTION: The surface of a material to be polished is chemically and mechanically flattened by using a polishing solution obtained by dispersing complex particles composed of an inorganic substance and a nonelectrolytic organic substance having >=500 molecular weight as abrasive grains into a solvent and adding a polishing promoter to the dispersion.