| 摘要 |
PURPOSE: A method for manufacturing a gate electrode of an electrically erasable and programmable read-only-memory(EEPROM) flash memory device is provided to compensate for charge loss as the thickness of a tunnel oxide layer varies, by making the thickness of an insulating layer between a control gate and a floating gate, the thickness of doped polysilicon of the floating gate and the dopant density of the doped polysilicon uniform. CONSTITUTION: A tunnel oxide layer(14a) is formed in an active region of a semiconductor substrate(10). A floating gate(16a) conductive layer and an insulating thin film are sequentially formed on the entire surface of the substrate having the tunnel oxide layer. A thickness variation of the insulating thin film and the floating gate conductive layer is limited to plus or minus 6 percent or less as compared with a target thickness. Resistivity uniformity regarding a dopant density of the floating gate is maintained at plus or minus 10 percent as compared with a target. A control gate conductive layer is formed on the insulating thin film. The control gate conductive layer, the insulating thin film and the floating gate conductive layer are patterned to have a self-aligned shape and to form a gate electrode of a flash memory.
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