| 摘要 |
A voltage variable capacitor includes a supporting substrate with a doped layer, an insulating layer positioned on the doped layer, and first, second, and third conductive segments positioned on the insulating layer parallel to the doped layer and spaced from the doped layer by the insulating layer so as to define first, second, and third capacitors. The first, second, and third conductive segments serve as external contacts and the opposed terminals of the first, second, and third capacitors are coupled together through the doped layer. In a preferred embodiment, the substrate is a semiconductor wafer and the doped layer is epitaxially grown. The insulating layer is a high dielectric constant material, such as zirconium titanate or material with a similar dielectric constant and the segments are gold.
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