发明名称 CRACKING TREATMENT DEVICE FOR PERFLUORIDE
摘要 PROBLEM TO BE SOLVED: To improve the cracking efficiency of perfluoride (PFC) by a catalyst. SOLUTION: A reactor 13 has a catalyst layer 14 packed with the catalyst containing the oxide of Al and Ni in the inside. The waste gases containing the PFC discharged from the semiconductor manufacturing device are heated to 700 deg.C by a heater 12 in the state that the gases are added to reaction water (or steam). The heated waste gases are introduced into the catalyst layer 14 where the PFC is cracked by the catalyst to HF and CO2. The waste gasses discharged from the catalyst layer 14 are cooled by a cooler 16. The HF in the waste gasses are thereafter removed by a removing device 17. Since the catalyst layer has the catalyst containing the oxide of the Al and Ni, the cracking efficiency of the PFC is improved.
申请公布号 JP2001224924(A) 申请公布日期 2001.08.21
申请号 JP20010000954 申请日期 2001.01.09
申请人 HITACHI LTD;HITACHI ENG CO LTD;HITACHI KYOWA ENGINEERING CO LTD 发明人 IRIE KAZUYOSHI;MORI TOSHIHIRO;YOKOYAMA HISAO;TOMIYAMA TAKAYUKI;TAKANO TOSHIHIDE;TAMADA SHIN;SUGANO SHUICHI
分类号 B01D53/68;B01D53/77;B01D53/86 主分类号 B01D53/68
代理机构 代理人
主权项
地址