LIGHT EMISSION DEVICE OF NITRIDE SEMICONDUCTOR

摘要

PURPOSE: A light emission device of nitride semiconductor is provided to prevent carriers from overflowing in an active region by using a multiple quantum barrier or an electron cutoff layer. CONSTITUTION: Active layers(5, 6) are made of a compound semiconductor of gallium nitride. A plurality of multiple quantum barriers(7, 8) are formed on the upper side of the active layer(5, 6) or formed on the lower side of the active layer, so that the energy band having the plurality of multiple quantum barriers(7, 8) is obtained. A light wave guide layer(9) of gallium nitride is formed on the active layer(7, 8) or the upper side and the lower side of the multiple quantum barriers(7, 8). The active layer(7, 8) is formed as the structure of a multiple quantum well.