| 摘要 |
PURPOSE: To provide a non-volatile memory that an erasion processing time can be shortened in the case of erasing plural sectors. CONSTITUTION: In a flash memory, when plural sectors are erased, erasing stress being strong as normal erosion processing utilizing boosting voltage cannot be applied to the other sectors to be erased by performing pre-erasion processing for the other sectors to be erased while normal erasion processing is performed for a sector having an object to be erased, but erasing stress being weaker than the above can be applied. Therefore, erasion processing is performed in the other sectors to be erased though it is not complete, a time of normal erasion processing performed after that can be shortened.
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