NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light emitting device provided with a means for reducing a carrier overflow and a strain caused by the injection of a lot of carriers. SOLUTION: A multiple quantum barrier made by laminating an AlGaN/GaN double layer a plurality of times or a strain-compensated multiple quantum barrier made by laminating an AlGaN/InGaN double layer a plurality of times is provided either above or below an active layer. A p-type clad layer is not required.