| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer photoresist process to form a composite photoresist layer having the desired thickness by laminating a plurality of thin photoresist layers using the photolithography technique. SOLUTION: After a photoresist layer is formed on a basic layer, the photoresist layer is aligned using a photomask, and after the aligning, the photoresist layer is developed, followed by the patterning. Thereafter, above sequence is repeated to form at least another photoresist layer on the basic layer. Each layer among a plurality of photoresist layers has the pattern substantially same as the adjacent photoresist layer and a composite photoresist layer having the desired thickness can be obtained by laminating the photoresist having the same pattern. |
