BURST-TYPE SEMICONDUCTOR MEMORY DEVICE HAVING FULL-PAGE MODE

摘要

PURPOSE: A burst-type semiconductor memory device having full page mode is provided, which has pre-charge scheme for charging the first and second input/output buses between a write operation section through the first input/output bus arranged at one side of an array and a write operation section through the second input/output bus arranged at the other side during full page mode. CONSTITUTION: A semiconductor memory device includes a memory cell array(100) having a plurality of memory cells(110), a plurality of word lines(WLi) and a plurality of bit line pairs(BLj,BLjB), the first and second input/output buses arranged at both sides of the memory cell array, and a plurality of column select lines(CSL0-CSLk) for simultaneously selecting the first and second input/output buses. The semiconductor memory device further has a pre-charge circuit for charging the first and second input/output buses with a predetermined voltage in response to a pre-charge signal during full-page mode, and a pre-charge controller(150) for generating the pre-charge signal during the full-page mode. The pre-charge controller generates the pre-charge signal having the shape of pulse between the first section during which data is written into the array through the first input/output bus during the (N-1)th cycle of a clock signal and the second section during which data is written into the array through the second input/output bus during the Nth cycle of the cock signal.