| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer where nanotopology is small, flatness is superior, and the amount of polishing in the mirror-surface polishing process of a wafer surface is small. SOLUTION: A lapped wafer is etched by alkali. Therefore, nanotopology appearing on a wafer surface can be reduced, thus suppressing the decrease in a yield in the CMP process. After etching, surface polishing with low damage is executed onto the wafer surface, thus obtaining superior flatness, preventing the decrease in resolution in an exposure process, at the same time reducing the amount of polishing in mirror surface polishing to less than 10μm, and reducing polishing time. After that, the reverse side of a wafer is polished lightly, thus preventing the roughness of the reverse side of the wafer from being deteriorated by alkali etching. Also, the front and the rear cannot be identified due to light polishing.
|
