| 摘要 |
There is a process for producing a semiconductor wafer having a front surface and a back surface and a polished edge, in which the semiconductor wafer is subjected to polishing on both sides. The process includes the following temporal sequence of steps: (a) polishing of the edge of the semiconductor wafer using a polishing cloth, with an alkaline polishing abrasive being supplied continuously; (b) simultaneous polishing of the front surface and the back surface of the semiconductor wafer, with an alkaline polishing abrasive being supplied continuously, between two rotating, lower and upper polishing plates which are both covered with a polishing cloth, both polishing cloths substantially comprising a porous, homogeneous, fiber-free polymer foam, and the polishing cloth of the lower polishing plate having a smooth surface and the polishing cloth of the upper polishing plate having a surface which is interrupted by channels; immediately followed by: (c) complete wetting of the front surface and the back surface and the edge of the semiconductor wafer with a film of liquid; and (d) cleaning and drying of the semiconductor wafer. There is also a semiconductor wafer which has been polished on both sides, having a front surface and a back surface and a polished edge and a maximum local flatness value SFQRmax of less than or equal to 0.13 mum, based on partial regions of a surface grid on the front surface of the semiconductor wafer, which has been produced in accordance with this method.
|
