发明名称 EMITTER STRUCTURE OF FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: An emitter structure of a field emission device and a method of manufacturing the same are provided to have long lifetime and the high efficiency of electron emission property while allowing to use a low price substrate such as a glass. CONSTITUTION: In an emitter structure of a field emission device, an electrode layer is formed on a substrate(21). A metal film(23) is formed on the electrode layer(22). nanosphere(24) are formed on the peak of the metal film as to emit electrons. An insulation film is coated on the electrode layer and the whole surface of the metal film on which the nanosphere are formed. A gate electrode and an insulation layer(25) are formed on the electrode layer as to surround the metal film. The nanosphere are formed with metal substances including Mo, Cr, Ta, Cu, etc.
申请公布号 KR20010076454(A) 申请公布日期 2001.08.16
申请号 KR20000003602 申请日期 2000.01.26
申请人 LG ELECTRONICS INC. 发明人 KIM, TAE YEONG
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
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