| 发明名称 |
Process for producing heteropitaxial diamond layers on Si-substrates |
| 摘要 |
The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which(a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and(b) following the nucleation phase diamond deposition takes place. |
| 申请公布号 |
US6274403(B1) |
申请公布日期 |
2001.08.14 |
| 申请号 |
US19950411762 |
申请日期 |
1995.07.17 |
| 申请人 |
DAIMLER BENZ AG |
发明人 |
KLAGES CLAUS-PETER;JIANG XIN;FüSSER HANS-JüRGEN;HARTWEG MARTIN;ZACHAI REINHARD;ROESLER MANFRED |
| 分类号 |
G01L9/04;C23C16/02;C23C16/26;C23C16/27;C30B25/02;C30B25/10;G01D21/00;G01K7/22;G01L9/00;H01C7/04;H01L21/00;H01L21/205;(IPC1-7):H01L31/031 |
主分类号 |
G01L9/04 |
| 代理机构 |
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