| 摘要 |
Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
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