NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING FERROELECTRIC MEMORY CELLS

摘要

PURPOSE: A non-volatile semiconductor memory device having ferroelectric memory cells is provided to prevent data, stored in ferroelectric capacitors connected to unselected word lines, from being broken down by preventing unselected plate lines from being boosted by peripheral signals. CONSTITUTION: A plurality of word lines(WL_0T) are arranged in the first direction, and a plurality of bit lines(BL_0T)-(BL_63T) are arranged in the second direction. A memory cell array comprises a plurality of memory cells(MC00-MC63) that are connected to a corresponding word line(WL_0T), corresponding bit lines(BL_0T)-(BL_63T), and a corresponding section plate line(SPL). A plate line selecting circuit(PL_T) selects one of the section plate lines in response to a word line driving signal and connects the selected section plate line(SPL) to the plate line(PL_T). A floating preventing circuit(120) prevents unselected section plate lines from being floated.