| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which an existing position of a defective memory cell causing a leak current can be detected easily and for a short time. SOLUTION: In a first large region obtained by selecting simultaneously the prescribed number of lines out of row selecting lines and a residual second large region, a region in which a leak current value is larger than the prescribed value is specified, in the specified first or second large region. further, in a first small region obtained by selecting simultaneously the row selecting lines of the prescribed number and a residual second small region, a region in which a leak current value is larger than the prescribed value is specified, and control specifying a row selecting line in which a leak current value is larger than the prescribed value by performing repeatedly the same processing. Therefore, an address output control circuit is provided in the device. Thus, an address output control signal externally supplied is a control signal for selecting the row selecting line by controlling the row address signal to perform the control.
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