| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an AlN buffer layer and a method of forming a GaN single-crystal film, which can keep the substrate temperature at a low temperature, which are safe, and which can enhance product quality. SOLUTION: This method of forming an AlN buffer layer comprises a heating step that heats a sapphire substrate 9 to a prescribed temperature by an electric furnace 10, an N2-H2 gas feed step that feeds N2-H2 gas of specified concentrations around the sapphire substrate 9 from a gas cylinder 7, and a plasma generating step that generates plasma in a region around the sapphire substrate 9 where the N2-H2 gas is contained. The method of forming the GaN single-crystal film comprises a hating step that heats the sapphire substrate 9 which has the AlN buffer layer to a prescribed temperature by the electric furnace 10, a TMG gas feed step that feeds TMG a gas of a prescribed concentration around the sapphire substrate 9 from gas cylinder 6, and a plasma- generating step, that generates plasma in a region around the sapphire substrate 9 where the TMG gas is contained. |
