发明名称 CAPACITOR HAVING TANTALUM OXYNITRIDE FILM AND METHOD FOR MAKING SAME
摘要 A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film.
申请公布号 US2001011740(A1) 申请公布日期 2001.08.09
申请号 US19980031526 申请日期 1998.02.26
申请人 发明人 DEBOER SCOTT JEFFREY;AL-SHAREEF HUSAM N.;THAKUR RANDHIR P.S.;GEALY DAN
分类号 H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20;H01L31/119 主分类号 H01L21/02
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