发明名称 ACCELERATOR BATH SOLUTION FOR DIRECT PLATING AND DIRECT PLATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a direct plating method using an accelerator bath solution containing copper ions and a reducing agent. SOLUTION: By the method in this invention, a copper thin film can be deposited on a resin substrate in a short time, so that the productivity of a copper-resin composite material can remarkably be improved. Moreover, in the case of being fed to electrolytic copper plating after that, the precipitation rate of electrolytic copper in the copper thin film deposited by the direct plating method in this invention is higher than that in a copper thin film deposited by the conventional well-known direct plating method. Furthermore, by adding a water soluble cerium compound, a water soluble thallium compound and/or water soluble sulfide to the accelerator bath solution in this invention, the stabilization of the bath solution can be attained.
申请公布号 JP2001214278(A) 申请公布日期 2001.08.07
申请号 JP20000329948 申请日期 2000.10.30
申请人 LEARONAL JAPAN INC 发明人 KIYOTA MASARU;TSUCHIDA HIDEKI;IMANARI MASAAKI;SUGITA YOSHIHIRO;BRASCH BILL;GARAY HENRY;WARYOLD KIETH
分类号 C23C18/20;C23C18/18;C23C18/40;C25D7/00;H05K3/42;(IPC1-7):C23C18/20 主分类号 C23C18/20
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