| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser irradiation technique, which enables a polycrystalline semiconductor film having uniformly distributed and well- arranged particles of a large size to be formed accurately at a target place. SOLUTION: A laser beam comprises a first region, having energy density fewer than Eu which is microcrystallization energy of an amorphous semiconductor thin film, and the second region with an energy density of Eu or higher located at both sides of the first region, arranged along one direction in the irradiation region of a laser beam. The first region is set as a valley shape, for example, and the width is set at 3μm or less, preferably less than 1.8μm.
|
