| 摘要 |
PROBLEM TO BE SOLVED: To effectively use a method, where an insulting film of reflow properties is embedded in the gaps between the electrodes of charge transfer electrodes, as countermeasures against the cutting due to steps of a wiring running on the upper part of the insulating film and a light-shielding film on the insulating film in a solid- state image pickup device of a single-layer electrode structure and at the same time, to modify the prior method, where the embedded insulating film becomes thin, and the flatness of the insulating film is impaired at regions where no charge transfer electrode is provided on the sides of the charge transfer electrodes and is not effective as countermeasures with respect to the cutting due to steps of the wiring running on the regions. SOLUTION: Charge transfer electrodes 106 are encircled with a pattern or a dummy pattern 115, linking together the fellow charge transfer electrodes of a certain phase on the outermost peripheries of the electrodes 106, whereby the opened regions of the terminal parts of the electrodes 106 are eliminated, the embedding properties of an insulating film of reflow properties for planarizing the gaps between the electrodes are enhanced, the formation of a satisfactory metal wiring or metal light- shielding film which does not have cutting, due to steps of the wiring or metal light- shielding film, is made possible and a highly reliable solid-state image pickup device is realized.
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