| 摘要 |
PROBLEM TO BE SOLVED: To enhance conversion efficiency of an output circuit and to reduce the size of a unit pixel, without having to reduce the image sensitivity of a solid-state image pickup element. SOLUTION: In a MOS transistor provided on the side of an FD part of an output circuit, an end part 112, which faces an FA part, of a gate part 110 is formed into a ring shape. An N+ layer 120 of the FD part is formed in a semiconductor substrate 100, using this ring-shaped end part 112 as a mask. That is, an ion implantation of P and As is performed through an aperture 112A provided in the center of the ring-shaped end part 112 of the gate part 110, whereby the layer 120 of a small size which corresponds to the diameter of this aperture 112A can be formed. In this way, the size of the layer 120 is reduced, whereby the parasitic capacity between the periphery of the aperture 112A and the layer 120 is suppressed, and the conversion efficiency of the output circuit is enhanced.
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