发明名称 SEMICONDUCTOR CHIP FORMING MESH TYPE PLUG ON LOWER SIDE OF ELECTRODE PAD
摘要 <p>PURPOSE: A semiconductor chip forming a mesh type plug on the lower side of an electrode pad is provided to be resistant to the thermal or mechanical shock inflicted in the electrode pad by forming the mesh type plug on the lower side of the electrode pad. CONSTITUTION: An interlayer insulating film(15) is formed on the electrode pad(13) of a semiconductor chip(10), and a gate poly-layer(21) is formed under the interlayer insulating film(15). The under side of the gate poly-layer(21) is a field oxide film(17). A plug(23), which passes through the interlayer insulating film(15) vertically in the electrode pad(13) is formed to connect with the gate poly-layer(21). A passivation film is formed to open the electrode pad(13), so that a bonding pad(11) is formed to protect the surface formed the semiconductor chip(10).</p>
申请公布号 KR20010073536(A) 申请公布日期 2001.08.01
申请号 KR20000002146 申请日期 2000.01.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, NAM SEOK;LEE, JIN HYEOK
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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