METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DRAM

摘要

PURPOSE: A method for forming a capacitor of a semiconductor DRAM is provided to improve the capacitance by obviating problems of a conventional art. CONSTITUTION: A cylindrical capacitor is electrically connected to a storage node contact plug. An etching stop layer is formed on a surface of a semiconductor substrate. A plurality of sacrificial layers is repeatedly stacked on the etching stop layer to form a multi-layered sacrificial layer. The multi-layered sacrificial layer is patterned to expose the storage node contact plug, so as to form a lower electrode pattern. A conductive layer is conformably formed on the lower electrode pattern. An HSG silicon(114) is formed on the conductive layer. The conductive layer is planarized to expose an upper surface of the multi-layered sacrificial layer. The multi-layered sacrificial layer is removed to form a lower electrode(116). A dielectric layer(118) is conformably formed on the lower electrode. An upper electrode(120) is formed on the surface of the semiconductor substrate including the dielectric layer.