SURFACE MODIFICATION METHOD AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To uniformly enclose a material to be treated with plasma without requiring special means for plasma generation, such as high-frequency power source, and to uniformly apply surface modification by ion implantation to the material to be treated. SOLUTION: A material 1 to be treated is introduced into a chamber 10, and the chamber 10 is evacuated and gas is introduced. A positive high voltage pulse is applied to the material 1 to be treated from a positive high voltage pulse generation power source 60 via a conductor 11 to form the vicinity of the material 1 into plasmic state. Then a negative high voltage pulse is applied to the conductor 11 from a negative high voltage pulse generation power source 50 via an interference prevention circuit 70 to apply ion implantation to the material 1 by means of positive ions in the plasma.