ELECTROSTATIC CAPACITY TYPE SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an electrostatic capacity type semiconductor pressure sensor which has small mounting area and high reliability, and to provide its manufacturing method. SOLUTION: The electrostatic capable capacity type semiconductor pressure sensor has a glass substrate 5, having a fixed electrode 4 arranged apposite to a displacement electrode 3 located at a prescribed interval and detects pressure from variation in the electrostatic capacity between the displacement electrode 3 and fixed electrode 4; and the glass substrate 5 is a metal wire containing glass substrate 5, having one or more metal wires 10 which are nearly orthogonal to its main surfaces and have their end parts exposed on the 1st and 2nd main surface, and one-end sides of the metal wires 10 are connected to the fixed electrode 4.