| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to obtain such a highly reliable silicon oxide film at a low temperature that can be used as a gate insulation film. SOLUTION: An organic silane having an ethoxyl group (e.g. TEOS) and an oxygen is used as a material, and a silicon oxide film is formed as to cover an island-like non single crystal silicon area by plasma CVD method. In this case, a hydrocarbon having a hydrogen chloride or a chlorine (e.g. trichloroethyrene), or a fluorine-containing gas is preferably mixed at 0.01 to 1 mol% of an atmosphere, therby reducing alkaline elements from the obtained silicon oxide film and further improving the reliability. In addition, before the silicon oxide film is formed, a silicon area is treated by a plasma including an oxygen and a hydrocarbon having a hydrogen chloride or a chlorine.
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