| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method with a small variation and a small diminution in dimensions of a gate side-face part caused by oxidation and etching in removal of resist or cleaning. SOLUTION: A gate insulating film 2, a lower gate electrode 3a made of polysilicon film, a barrier metal film 3b, an upper gate electrode 3c made of metallic film are formed on a silicon substrate 1. Ashing for removing a photo- resist film 4 is carried out to form a plasma oxide film 5 on the lower gate electrode 3a. The surface part of the plasma oxide film 5 is made nitride in a nitriding step to from a silicon nitride film 13a. After each diffusion layer 6, 8 or 12 is formed, an interlayer insulating film 11 is deposited and a contact hole 15 is formed in the interlayer insulating film 11. Then, oxidation and etching of the lower gate electrode 3a is prevented by the nitride oxide film 13a, and diminution in horizontal dimension of the lower gate electrode 3a can be reduced.
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