发明名称 INFRARED RAY SENSOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared ray sensor of stable element structure by inserting an adhesion layer between an antimony thin-film and a base material layer formed on the surface of a substrate, which constituting a thin-film thermo couple, for improved adhesion. SOLUTION: In this infrared sensor, incident infrared ray is converted into heat, and the temperature change caused by the heat is detected with a thin-film thermo couple. Here, one of a thermoelectric thin film is an antimony thin film 5, and a thin film 9 comprising any of titanium, nickel, or aluminum is inserted between the antimony thin film 5 and a base material layer 4 formed on the surface of a sensor substrate 1.
申请公布号 JP2001203399(A) 申请公布日期 2001.07.27
申请号 JP20000012997 申请日期 2000.01.21
申请人 ALPS ELECTRIC CO LTD 发明人 ENDO TOSHIYA;SUGIYAMA DAIKI
分类号 H01L35/32;G01J1/02;G01J5/02;G01J5/12;G01J5/14;H01L35/18;(IPC1-7):H01L35/32 主分类号 H01L35/32
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