发明名称 INFRARED SENSOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared sensor of high mechanical strength capable of arranging a thermocouple with high density and capable of efficiently trans mitting heat generated in a heat absorbing layer to the thermocouple. SOLUTION: This sensor is provided with a support member including a support film 3 and a substrate 1 having a hollow portion 2 to support the support film 3, polysilicon films 4 formed ranging over from an upper part of the hollow portion 2 to an upper part of the substrate 1, SiO25 formed on the polysilicon films 4 and having the first contact hole in the upper part of the hollow part 2 and the second contact hole in the upper part of the substrate 1, an aluminium film 6 connected to the polysilicon film 4 via the first contact hole and connected to the adjacent polysilicon film 4 via the second contact hole, and the heat absorbing layer 8 formed in the upper part of the hollow portion 2 to cover the upper part of the first contact hole. The aluminium film 6 is layered in the upper part of the hollow portion 2 via the corresponding polysilicon film 4 and SiO25.
申请公布号 JP2001201397(A) 申请公布日期 2001.07.27
申请号 JP20000009420 申请日期 2000.01.18
申请人 HAMAMATSU PHOTONICS KK 发明人 SHIBAYAMA KATSUMI
分类号 H01L35/32;G01J1/02;G01J5/10;G01J5/12;(IPC1-7):G01J1/02 主分类号 H01L35/32
代理机构 代理人
主权项
地址