SILICON ON INSULATOR CIRCUIT STRUCTURE WITH BURIED SEMICONDUCTOR INTERCONNECT STRUCTURE AND METHOD FOR FORMING SAME

摘要

A silicon on insulator (SOI) substrate is formed with a base substrate, a buried oxide layer over the base substrate, and a thin silicon device layer over the buried oxide layer. A buried semiconductor interconnect structure is embedded in the buried oxide layer for providing high resistance semiconductor coupling between various devices fabricated in the silicon device layer. A method for forming an SOI substrate with a buried semiconductor interconnect structure includes forming the structure as a protrusion on the face of a first substrate and filling the non-protruding regions with an insulator to create a smooth face. The substrate is fused face down on a second substrate to form the silicon on insulator substrate.