| 摘要 |
Semiconductor device used as a DRAM is fabricated in a multiple step process to form a capacitor-dielectric layer which is covered by an upper electrode layer. Production of a semiconductor device comprises: forming an active matrix (110) provided with a transistor, several conducting stops (116), and an insulating layer; forming a seed layer (130) on the matrix; forming a blind oxide layer on the seed layer; forming a pattern of the blind oxide layer to a predetermined configuration so that sections of the seed layer are exposed; filling the exposed sections with a conducting material; removing the blind oxide layer; removing the sections of the seed layer not covered with the conducting material so that lower electrodes are obtained; forming a capacitor-dielectric (138) on the lower electrodes; and forming an upper electrode layer (140) on the capacitor-dielectric layer. Preferred Features: The capacitor-dielectric layer contains barium strontium titanate. Before the seed layer is produced, barrier metals preferably selected from TiN, TiSiN, TiAlN, TaSiN and TaAlN are formed on the conducting stops. The seed layer contains Pt, Ru, Ir, Os, W, Mo, Co, Ni, Au or Ag.
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