A SEMICONDUCTOR DEVICE

摘要

A semiconductor device 1 comprises a body 2 of insulating material having a surface 3 to which a semiconductor element 4 and an interconnect structure 5 are fastened, which interconnect structure 5 is disposed between the semiconductor element 4 and the body 2 of insulating material and has a patterned metal layer 7 facing the body 2 of insulating material, which patterned metal layer 7 comprises conductor tracks 8 and 9.In order to reduce the power consumption of the semiconductor device 1, an insulating layer 12 having a dielectric constant ∈r below 3 is disposed between the patterned metal layer 7 of the interconnect structure 5 and the body 2 of insulating material, and an insulating barrier layer 13 is disposed between the semiconductor element 4 and the insulating layer 12 having a dielectric constant ∈r below 3, so as to counteract that contaminants from the insulating layer 12 having a dielectric constant ∈r below 3 can reach the semiconductor element 4.