发明名称 Method of producing a semiconductor device
摘要 A method of producing a semiconductor device characterized by the steps of: (a) forming a substrate (103) which makes contact with side surfaces of a semiconductor element (101) and surrounds the semiconductor element to hold the semiconductor element; (b) providing a wiring substrate (117) electrically connected to the semiconductor element (108) and having external connecting terminals (113b) for electrically connecting the semiconductor element (101) to an outside element; and (c) encapsulating the semiconductor element by a resin (104a). <IMAGE>
申请公布号 EP1119038(A2) 申请公布日期 2001.07.25
申请号 EP20010105467 申请日期 1994.10.28
申请人 FUJITSU LIMITED;KYUSHU FUJITSU ELECTRONICS LIMITED 发明人 KAWAHARA, TOSHIMI;NAKASEKO, SHINYA;OSAWA, MITSUNADA;OSUMI, MAYUMI;ISHIGURO, HIROYUKI;KATOH, YOSHITUGU;KASAI, JUNICHI;TANIGUCHI, SHINICHIROU
分类号 H01L21/48;H01L21/56;H01L21/68;H01L23/24;H01L23/31;H01L23/498 主分类号 H01L21/48
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