CONTACT STRUCTURE OF INTERCONNECTION, MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a contact structure of an interconnection is provided to minimize contact resistance of a contact part composed of aluminum-based metal and an indium-zinc-oxide(IZO) material and to guarantee reliability of the contact part including a pad part, by performing a heat treatment process and eliminating a residual material on a metal layer. CONSTITUTION: A metal interconnection is formed on a substrate. An inorganic insulation layer covering the interconnection is deposited. A heat treatment process is performed. The inorganic insulation layer is patterned to form a contact hole(74,76,78) exposing the interconnection. A conductive layer electrically connected to the interconnection is formed.