Opto-electronic component made from II-VI semiconductor material

摘要

Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (1) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (2) including a beryllium-containing chalcogenide.