| 摘要 |
1,160,213. Silicon crystals. FUJITSU Ltd. 18 Jan., 1967 [18 Jan., 1966], No. 2756/67. Heading B1S. A silicon crystal 7 is grown at 600-1,200‹C on a silicon substrate wafer 1 having an insulating coating 2 of oxide or nitride from an alloy zone 3 containing gold, silver or aluminium. A decreasing temperature gradient from the supply wafer to the substrate wafer is maintained and the alloy zone passes through the supply wafer. The alloy zone is formed from a metal layer having a thickness of 1-10 Á. Either or both the subsrate and supply wafers may be coated (by vacuum evaporation or plating) with the metal to form the layer. The layer may alternatively be in the form of a foil. A coating, 1-10 Á thick, of silicon may be formed on the insulating coating by deposition from vapour before the crystal-growing process.
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