| 摘要 |
PURPOSE: A capacitor device, a manufacturing method thereof, and a semiconductor device are provided to be capable of forming a dielectric layer under oxygen gas atmosphere without the deterioration of capacitor device characteristics. CONSTITUTION: A capacitor device is provided with a lower substrate(30), an insulating layer(32) having a connection hole(34) on the lower substrate, the first diffusion barrier(36) formed on the entire surface of the resultant structure, and a lower electrode(38) formed on the first diffusion barrier for being electrically connected with the lower substrate through the connection hole. The capacitor device further includes the second diffusion barrier(40) formed on the predetermined portion of the lower electrode, a dielectric layer(42) formed on the resultant structure, and an upper electrode(44) on the dielectric layer.
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