| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device having a self alignment structure is provided to electrically insulate between a storage node and a bit line contact, secure the stability of process and prevent a bit line contact and a bit line from being mis-aligned. CONSTITUTION: The method includes ten steps. The first step is to form the first insulating film(4) on a semiconductor substrate(2) on which a lower structure such as a transistor is formed. The second step is to form a material film pattern(6) exposing the first insulating film of an area, on which a bit line is to be formed, on the first insulating film. The third step is to form a spacer(8) on the sidewall of the material film pattern. The fourth step is to form a bit line(10) lower than the material film patterns between the material film patterns. The fifth step is to sequentially form second and third insulating films(12,14) on a resultant in which the bit line is formed. The sixth step is to etch the third insulating film until the second insulating film is exposed. The seventh step is to remove an exposed area of the second insulating film. The eighth step is to form a fourth insulating film(16) covering a resultant from which the exposed area of the second insulating film is removed. The ninth step is to form a contact hole through which the semiconductor substrate is exposed. The tenth step is to form a storage node(18) connected to the semiconductor through the contact hole.
|
