| 发明名称 |
Edge-contacted vertical carbon nanotube transistor |
| 摘要 |
A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
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| 申请公布号 |
US7960713(B2) |
申请公布日期 |
2011.06.14 |
| 申请号 |
US20080346513 |
申请日期 |
2008.12.30 |
| 申请人 |
ETAMOTA CORPORATION |
发明人 |
HUNT BRIAN;HARTMAN JAMES;BRONIKOWSKI MICHAEL J.;WONG ERIC;LIM BRIAN Y. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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